Si-doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition

Abstract

Silane is used as a doping gas for epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD). The electron concentration mainly depends on the silane flux, but the doping efficiency is affected by the partial pressure of arsine. The Si‐doped epitaxial layers show a broadband spectrum of photoluminescence at 915 nm in addition to band‐edge spectrum, which originates from self‐activated complex of (V)_Ga–Si_Ga. It appears from the dependence of 915‐nm spectrum on the arsine molar fraction that Ga vacancies increase with the increase of the partial pressure of arsine in the epitaxial growth of GaAs by MOCVD.