We report on the intentional n‐type doping of the diluted magnetic semiconductor Zn1−xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x‐ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018 cm−3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.