High-speed Ga0.47In0.53as photoconductive detector for picosecond light pulses

Abstract

A planar GaInAs photodetector suitable for the detection of light pulses in the picosecond range is presented. The device investigated exhibits a photocurrent rise time of ∼ 20 ps and an inner gain-bandwidth product of ΓB ∼ 125 GHz. At a wavelength of 820 nm the sensitivity is 3 A/W.