Electrical transport properties and phase stability of amorphous Cu x Sn1-x alloys

Abstract
Cu x Sn1-x amorphous alloys with composition ranging from x = 0·25 to x = 0·81 have been obtained using a refined vapour-quenching technique. The composition dependence of the crystallization temperature, T cr, of the electrical resistivity, ρ0, and of the temperature coefficient of the resistivity, α, have been measured. For the first time, clear evidence has been obtained for the existence of maxima in T cr(x) and ρ0(x) corresponding to a minimum in α(x) near x = 0·77.