Ohmic contacts on n-GaAs produced by laser alloying of Ge films
- 1 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (4), 113-114
- https://doi.org/10.1049/el:19800084
Abstract
A Q-switched Nd:y.a.g. laser has been used to form ohmic contacts on n-type GaAs covered with an evaporated film of Ge. The contacts showed good surface morphology with contact resistivities as low as 10−6 Ω cm2.Keywords
This publication has 1 reference indexed in Scilit:
- Introduction to Semiconductor HeterojunctionsPublished by Elsevier ,1972