Low threshold current lead-telluride diode lasers grown by molecular beam epitaxy
- 1 March 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (3), 1579-1582
- https://doi.org/10.1063/1.329641
Abstract
We have grown homojunction PbTe diode lasers by molecular beam epitaxy with cw threshold current densities as low as 40 A/cm2. The low current tuning rate of 1.2 cm−1/A implies good frequency stability against power supply variations. These diodes also exhibited high‐temperature operation (85‐K cw, 150‐K pulsed), high cw output power (up to 3.5 mW), and a wide cw tuning range (280 cm−1).Keywords
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