Upside-down fabricated GaP monolithic display
- 1 January 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1), 279-281
- https://doi.org/10.1063/1.323372
Abstract
An upside‐down fabricated GaP monolithic display having p‐n junctions formed by zinc diffusion is developed and the feasibility of practical use studied. In this device, the zinc diffusion is performed at a temperature in the vicinity of 650 °C to increase the efficiency. The device front plane with the p‐n‐junction segments faces the substrate upon which individual digits are assembled, and the light emitted from the p‐n junctions travels through the GaP chip and exits from the polished back plane, which faces the observer. The individual wire bonding of each segment is eliminated using flip‐chip technique. It is thought that this device is the most suitable for practical use.Keywords
This publication has 3 references indexed in Scilit:
- Laser-machined GaP monolithic displaysApplied Physics Letters, 1974
- Monolithic GaP green-emitting LED matrix-addressable arraysIEEE Transactions on Electron Devices, 1973
- The diffusion of zinc in gallium phosphide under excess phosphorus pressure from a ZnP2 sourceSolid-State Electronics, 1971