Noise voltage and instability in GaAs devices
- 13 June 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24), 2034-2036
- https://doi.org/10.1063/1.99573
Abstract
Low-frequency current noise that has a f−3/2 power law noise spectrum is observed in GaAs field-effect devices. We show that this is due to modulation by a thermally activated and bias-independent voltage noise in the gate. We identify this noise with generation recombination associated with the semi-insulating substrate supporting these devices. Lowering the activation energy of these traps by the drain bias causes instability in this noise process, leading to low-frequency oscillations that have previously been identified with high field domains in the substrate material.Keywords
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