Single electron transport and current quantization in a novel quantum dot structure

Abstract

We report on single electron transport via a novel quantum dot structure fabricated by a combination of mesa etching and gate formation. In this device electrons are confined in an etched submicron wire and squeezed further by two barrier gates. The resulting dot is of a very small size, and the number of confined electrons can be tuned down to the few electron limit. This novel structure has a large charging energy and an improved current quantization during turnstile operation. In small dots, containing only a few electrons, we found Coulomb oscillations with an unexplained multiple peak structure.