The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths
- 15 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2), 841-843
- https://doi.org/10.1063/1.337386
Abstract
The refractive index of silicon has been measured at elevated temperatures at several different laser wavelengths of the HeNe and the Ar+ cw lasers. This data, along with the reinterpretation of polarization modulation ellipsometry data, shows that the refractive index is linear with temperature (from 25 to ∼750 °C) and that the temperature coefficient of the refractive index increases as the wavelength of light decreases.Keywords
This publication has 4 references indexed in Scilit:
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperaturesApplied Physics Letters, 1982
- Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometryJournal of Applied Physics, 1982
- Refractive index of silicon and germanium and its wavelength and temperature derivativesJournal of Physical and Chemical Reference Data, 1980