Sputtering and surface composition modifications of Ti doped graphite RG-Ti at temperatures up to 2000 K
- 30 September 1994
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 212-215, 1211-1217
- https://doi.org/10.1016/0022-3115(94)91023-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Heat removal by the divertor plate and limiter materials in fusion reactorsJournal of Nuclear Materials, 1993
- Mechanism of chemical erosion of sputter-deposited C:H filmsApplied Physics Letters, 1992
- Resistance of carbon-based materials for the ITER divertor under different radiation fluxesJournal of Nuclear Materials, 1992
- Temperature-dependent sputtering of doped graphites and boron carbideJournal of Nuclear Materials, 1992
- Thermal desorption of D2 and CD4 from bulk-boronized graphitesJournal of Nuclear Materials, 1992
- Sputtering yields and angular distributions of the eroded atoms for deuterium irradiation of stainless steel 304 LN at temperatures between 300 and 1200 KNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Light-Ion sputtering yield measurements of Ti AND TiC under O2 exposure at high temperatureJournal of Nuclear Materials, 1989
- Sputtering of graphite with light ions at energies between 20 and 1000 eVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Deuterium retention in TiC crystals prepared by chemical vapor deposition and floating zone methodsJournal of Nuclear Materials, 1984
- Temperature dependence of H saturation and isotope exchangeJournal of Nuclear Materials, 1981