Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition
- 1 July 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1), 44-46
- https://doi.org/10.1063/1.96397
Abstract
The uninterrupted growth of high quality GaInAs layers on InP buffers by atmospheric pressure metalorganic chemical vapor deposition using trimethylindium is reported. A lattice mismatch smaller than 4.3×10−4 and low-temperature photoluminescence exciton linewidth of 2.6 meV have been obtained, along with best 300-K, 77-K, and 4.2-K Hall mobilities of 11 200, 64 000, and 80 000 cm2/Vs, respectively. Such high mobility values at 4.2 K are explained by the existence of a two-dimensional electron gas and demonstrate the superior quality of the GaInAs epilayers grown in our laboratory.Keywords
This publication has 10 references indexed in Scilit:
- Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium sourceApplied Physics Letters, 1985
- Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InPApplied Physics Letters, 1985
- Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor depositionJournal of Electronic Materials, 1984
- Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindiumApplied Physics Letters, 1984
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor depositionJournal of Applied Physics, 1983
- Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and ArsineJournal of the Electrochemical Society, 1983
- Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlatticesJournal of Vacuum Science & Technology B, 1983
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- The use of a metalorganic compound for the growth of InP-epitaxial layersJournal of Electronic Materials, 1981