A low-power-dissipation broadband cryogenic preamplifier utilizing GaAs MESFETs in parallel
- 1 August 1993
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 64 (8), 2373-2378
- https://doi.org/10.1063/1.1143938
Abstract
No abstract availableKeywords
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- Anomalous noise behavior of the junction-gate field-effect transistor at low temperaturesIEEE Transactions on Electron Devices, 1970