Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes
- 31 July 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (7), 699-706
- https://doi.org/10.1016/0038-1101(74)90093-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effectsIEEE Transactions on Electron Devices, 1972
- Recombination dependent characteristics of silicon P+−N−N+ epitaxial diodesSolid-State Electronics, 1972
- The calculation of minority carrier current in diffused emitter regionsSolid-State Electronics, 1972
- Transient behaviour of a range of P+−N−N+ diodes with narrow centre regionsSolid-State Electronics, 1970
- Semiquantitative treatment of transients in silicon epitaxial diodesElectronics Letters, 1969
- An analysis of inertial inductance in a junction diodeIRE Transactions on Electron Devices, 1960