Random-deposition models for thin-film epitaxial growth

Abstract

The simple on-top site random-deposition model for film growth on a simple-cubic (100) substrate is extended to other adsorption-site geometries and crystal structures. Nontrivial statistical correlations within the growing film typically result. However, the master equations can be solved exactly to elucidate, e.g., growth kinetics, Bragg intensity ($I_{\mathrm{Br})}$ behavior for surface diffraction, and spatial correlations within the film. Other techniques facilitate analysis of the percolative structure of intralayer islands. For random deposition at fourfold hollow sites on a face-centered cubic (100) substrate, despite the absence of diffusion, there are distinct $I_{\mathrm{Br}}$ oscillations similar to those observed experimentally during deposition of Pt on Pd(100) at low temperature.