I-V characteristics of thin-film transistors

Abstract

A mathematical theory has been formulated for the steady‐state I‐V characteristics of thin‐film transistors, taking into account explicitly the unique properties of this device, namely, the existence of bulk and interface localized states, and the small semiconductor thickness. An excellent agreement has been obtained between the theory and the experimental data. The electronic properties of the semiconductor, i.e., the free carrier density, and the densities of surface and the bulk localized states can be determined by direct comparison of the calculated and experimental I‐V characteristics. The two‐dimensional theory predicts the current saturation without an ad hoc model. The charge distribution in the semiconductor and the sensitivity of the gain to various parameters are discussed.