Physical origin of the anomalous temperature dependence of theyellow exciton luminescence intensity inO
- 15 April 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (8), 5519-5522
- https://doi.org/10.1103/physrevb.25.5519
Abstract
A simple model is presented to explain the minimum in the integrated intensity of the phonon-assisted yellow exciton luminescence in O as a function of temperature. It is shown that this behavior is due to a minimum in the temperature-dependent exciton population lifetime. This model also predicts the temperature dependence of the time-resolved luminescence spectrum in O.
Keywords
This publication has 4 references indexed in Scilit:
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- Direct Evidence for Phonon-Assisted Transitions to theParaexciton Level of the Yellow Exciton Series inOPhysical Review Letters, 1978
- Spectroscopic properties of semiconductor crystals with direct forbidden energy gapPhysica Status Solidi (a), 1977
- Resonance Raman studies inO. I. The phonon-assistedyellow excitonic absorption edgePhysical Review B, 1975