dc Magnetoconductivity and Energy Band Structure in Semiconductors

Abstract

A general method is described for experimentally obtaining all components of the magnetoresistivity tensor; thence the components of the magnetoconductivity tensor ($\mathcal{L}$) can be computed. The method is specialized to cubic materials to obtain $\mathcal{L}\left(\phi \right)$, where $\phi$ is the angle between H and the [001] direction in a (100) plane. Mass tensor theory has been developed into a convenient form and applied to this experiment for the three spheroidal cases. Expressions for determination of the mass ratio ($K$) have been derived. The experiment has been performed on $n$-type germanium and silicon, verifying the known band structures by means of the angular dependence of $\mathcal{L}\left(\phi \right)$. $K$ has been determined for germanium from 65°K to 200°K.