$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- 27 May 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (7), 703-705
- https://doi.org/10.1109/led.2009.2021004
Abstract
A novel method of fabricating HfO x -based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10 5 cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO x stacked layer in this letter shows promising application in the next generation of nonvolatile memory.Keywords
This publication has 8 references indexed in Scilit:
- Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$IEEE Electron Device Letters, 2008
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching MemoryNano Letters, 2008
- Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory DevicesIEEE Electron Device Letters, 2007
- Atomic Layer Deposited Ultrathin HfO[sub 2] and Al[sub 2]O[sub 3] Films as Diffusion Barriers in Copper InterconnectsElectrochemical and Solid-State Letters, 2007
- Improvement of resistive memory switching in NiO using IrO2Applied Physics Letters, 2006
- Non-volatile resistive switching for advanced memory applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulsesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Colossal electroresistance of athin film at room temperaturePhysical Review B, 2004