A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 525-528
- https://doi.org/10.1109/iedm.1991.235341
Abstract
A recently developed model for the degradation of Si p-MOS transistors by hot-carrier injection is extended to take into account the detrapping of trapped electrons. Based on their approach, a more reliable and practicable lifetime prediction method for p-MOS transistors is established. A novel expression for the lifetime is derived which is valid in a wider range than the empirical power-law dependence of lifetime on gate current.<>Keywords
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