Microscopic metal clusters and Schottky barrier formation

Abstract

A simple interpretation is given of observed logarithmic dependence of the surface Fermi level on coverage of GaAS(110) in the range ${10}^{\mathrm{-}4}$–${10}^{\mathrm{-}1}$ ML in terms of the charging energy of microscopic metal clusters formed during the deposition process. New data taken on films formed at low temperature suggest that the clustering process is strongly temperature dependent.