Current oscillations in semi-insulating GaAs associated with field-enhanced capture of electrons by the major deep donor EL2
- 15 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10), 989-991
- https://doi.org/10.1063/1.93366
Abstract
Current oscillations thermally activated by the release of electrons from deep levels in undoped semi-insulating GaAs were observed for the first time. They were attributed to electric field-enhanced capture of electrons by the dominant deep donor EL2 (antisite AsGa defect). This enhanced capture is due to the configurational energy barrier of EL2, which is readily penetrated by hot electrons.Keywords
This publication has 17 references indexed in Scilit:
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- A mechanism for negative differential resistance in III-V and II-VI semiconductors associated with the enhanced radiative capture of hot electronsJournal of Physics C: Solid State Physics, 1974
- An experimental study of high-field moving domains produced by deep centres in semi-insulating GaAs†International Journal of Electronics, 1971
- The influence of traps on the Watkins - Gunn effectBritish Journal of Applied Physics, 1966
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- The Dependence of Capture Rate on Electric Field and the Possibility of Negative Resistance in SemiconductorsProceedings of the Physical Society, 1961
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961