High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
- 7 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (10), 1154-1156
- https://doi.org/10.1063/1.107630
Abstract
The first GaInAsSb/AlGaAsSb diode lasers with a quantum‐well active region have been demonstrated. These devices, which were grown by molecular beam epitaxy, emit at ∼2.1 μm. For room‐temperature pulsed operation of lasers 100 μm wide, threshold current density as low as 260 A/cm2 and differential quantum efficiency up to 70% have been obtained for cavity lengths of 2000 and 300 μm, respectively. One device 100 μm wide and 1000 μm long has operated pulsed at heatsink temperatures up to 150 °C, with a characteristic temperature of 113 K between 20 and 40 °C. For another device of the same dimensions, cw output power up to 190 mW/facet has been achieved at a heatsink temperature of 20 °C. These characteristics represent a dramatic improvement in performance over double‐heterostructure GaInAsSb/AlGaAsSb diode lasers.Keywords
This publication has 5 references indexed in Scilit:
- Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstrationApplied Physics Letters, 1992
- Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxyApplied Physics Letters, 1991
- Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxyApplied Physics Letters, 1991
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu mIEEE Journal of Quantum Electronics, 1991