Polycrystalline is prepared from three different silane compounds (methyl‐trichlorosilane, dimethyl‐dichlorosilane, and trimethyl‐chlorosilane) by the van Arkel process. The influence of the growth parameters (flow rates, vapor pressures, and deposition temperature) on the growth rate and the stoichiometry of the deposit is investigated. The most satisfactory results in terms of stoichiometry are obtained in the 1400°–1600°C temperature range. Doping is accomplished by adding trimethyl‐aluminum and diborane. The 6H silicon carbide crystals are grown by the sublimation technique using doped and undoped polycrystalline material.