Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 K

Abstract

The electrical resistivity and Hall effect of TiSi₂ thin films were measured systematically in the temperature range of 2–300 K. The results were compared with theory and other work. The TiSi₂ films were formed by Ti/Si solid‐state interaction on crystalline silicon or polysilicon substrates. The temperature dependence of the electrical resistivity of TiSi₂ was approximated by the Bloch–Gruneisen theory. The Hall‐effect data show a multicarrier conduction mechanism in TiSi₂. At low temperatures the Hall coefficient is positive for both substrates, but is negative at room temperature. The temperature at which the change of sign occurs is approximately 180 K for the crystalline‐Si substrate, and approximately 90 K for the polysilicon substrate. This is discussed briefly in terms of scattering mechansims for a simple model of the electronic structure.