Far-Infrared Two-Photon Transitions in-GaAs
- 26 October 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (17), 1198-1201
- https://doi.org/10.1103/physrevlett.47.1198
Abstract
Two-photon transitions in the far-infrared spectral range have been observed for the first time. The magnetophotoconductivity of -GaAs measured by a pulsed high-power CF molecular laser at μm exhibited two-photon transitions between and shallow donor states and two-photon cyclotron resonance. The experimental results and symmetry considerations indicate that the observed two-photon cyclotron resonance is caused by impurities.
Keywords
This publication has 6 references indexed in Scilit:
- Narrow Gap Semiconductors Physics and ApplicationsLecture Notes in Physics, 1980
- Quantum resonances in the valence bands of zinc-blende semiconductors. I. Theoretical aspectsPhysical Review B, 1979
- Mechanism of cyclotron resonance induced conductivity in n-GaAsSolid State Communications, 1978
- A high-precision study of excited-state transitions of shallow donors in semiconductorsJournal of the Optical Society of America, 1977
- Inhomogeneous Line Broadening in Donor Magneto-Optical SpectraPhysical Review B, 1973
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971