Integrated Microstrip and Antipodal Fin-Line Leads to Enhanced Performance P.I.N. Diode Components

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. mtt 31, 593-597
https://doi.org/10.1109/euma.1984.333389

Abstract

Distributed microstrip line tuning elements are used in conjunction with fin-line techniques to design p.i.n. diode switches for the 26 - 110 GHz frequency band. Experimental results are presented for components utilising the forward and reverse switching modes operating at centre frequencies of 34 GHz and 94 GHz.

Keywords

This publication has 3 references indexed in Scilit:

New Developments with Integrated Fin-Line and Related Printed Millimeter Circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
Fin-line PIN-diode attenuators and switches for 94 GHz range
Electronics Letters, 1982
A Quadriphase Fin-Line Modulator
IEEE Transactions on Microwave Theory and Techniques, 1980

Cited by 1 article