Nonlinear GaAs MESFET modeling using pulsed gate measurements
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 229-231
- https://doi.org/10.1109/mwsym.1988.22019
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- RF Nonlinear Device Characterization Yields Improved Modeling AccuracyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1985
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- A MESFET Model for Use in the Design of GaAs Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1980