Indium-Tin Oxide Thin Films Prepared by Chemical Vapor Deposition from Metal Acetates

Abstract

Transparent conductive indium-tin oxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method without using an oxygen donor. The raw materials were indium acetate and tin diacetate, which are inexpensive and easy to handle. A 260-nm-thick polycrystalline film was obtained after 1 hour of deposition at a reaction temperature of 300°C. The resistivity was 6.93×10¹³ Ω·cm, and the transmittance was more than 90% in most of the visible range (450–700 nm).