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New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication
Home
Publications
New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication
New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication
WH
W.R. Hunter
W.R. Hunter
TH
T.C. Holloway
T.C. Holloway
PC
P.K. Chatterjee
P.K. Chatterjee
AT
A.F. Tasch
A.F. Tasch
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1 January 1980
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1980.189949
Abstract
No abstract available
Keywords
VERTICAL ETCH
SUBMICROMETER
FABRICATION
MOSFET
NEW EDGE
EDGE DEFINED VERTICAL
Cited by 6 articles