Influence of impurity adsorption on the properties of silicon single crystal layers
- 1 September 1972
- journal article
- letter
- Published by Springer Nature in Journal of Materials Science
- Vol. 7 (9), 1080-1083
- https://doi.org/10.1007/bf00550072
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Untersuchung der durch Metallspuren verursachten Störstellen in Si‐EpitaxieschichtenCrystal Research and Technology, 1971
- SILICON SURFACE STRUCTUREApplied Physics Letters, 1968
- Spectrochemical determination of trace-impurities in high-purity siliconAnalytical and Bioanalytical Chemistry, 1968
- Direct observation of electrical faults in planar transistors made in epitaxially grown siliconSolid-State Electronics, 1968
- On the nature of annealed semiconductor surfacesPhysics Letters A, 1968
- Leed study of a nickel induced surface structure on silicon (111)Surface Science, 1967
- Travelling Solvent Defects on Silicon WafersJournal of the Electrochemical Society, 1967
- Macroscopic Defects in Epitaxial SiliconJournal of the Electrochemical Society, 1967
- Stain Films on SiliconJapanese Journal of Applied Physics, 1965