Chemical composition of porous silicon layers studied by IR spectroscopy
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4), 240-244
- https://doi.org/10.1016/0169-4332(93)90098-v
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Optics of two-phase compositesVibrational Spectroscopy, 1990
- Conventional and unconventional infrared spectrometry and their quantitative interpretationVibrational Spectroscopy, 1990
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porous silicon: The material and its applications to SOI technologiesMicroelectronic Engineering, 1988
- Coherent and incoherent reflection and transmission of multilayer structuresApplied Physics B Laser and Optics, 1986
- The dielectric constant of a composite material—A problem in classical physicsPhysics Reports, 1978
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935
- XII. Colours in metal glasses and in metallic filmsPhilosophical Transactions of the Royal Society A, 1904