An analytical solution to a double-gate MOSFET with undoped body
Top Cited Papers
- 1 May 2000
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (5), 245-247
- https://doi.org/10.1109/55.841310
Abstract
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.Keywords
This publication has 3 references indexed in Scilit:
- Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layersJournal of Applied Physics, 1999
- CMOS scaling into the nanometer regimeProceedings of the IEEE, 1997
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987