A New Technique of Boron Doping in Si:H Films
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2), L84
- https://doi.org/10.1143/jjap.20.l84
Abstract
Very high doping efficiency of boron atoms in hydrogenated silicon has been achieved using the glow discharge of a SiH4-B2H6 mixture gas under conditions of a low concentration of SiH4 and application of magnetic field to the plasma column. A maximum conductivity of 7.8 Ω-1cm-1 has been obtained at a doping ratio of N B2H6 /N SiH4 =2.6%. This high conductivity is found to be related to partial crystallization of amorphous Si:H network.Keywords
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