Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micron
- 31 October 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (10), 1275-1278
- https://doi.org/10.1016/0038-1101(90)90030-i
Abstract
No abstract availableKeywords
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