DC analysis of an MOS source follower
- 1 September 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 3 (3), 306-307
- https://doi.org/10.1109/JSSC.1968.1049908
Abstract
The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included.Keywords
This publication has 1 reference indexed in Scilit:
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966