Dielectric Theory of Impurity Binding Energies. I. Group-V Donors in Si and Ge
- 15 February 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 1 (4), 1540-1544
- https://doi.org/10.1103/physrevb.1.1540
Abstract
A dielectric theory of chemical shifts of ground-state donor energies of group-V impurities in Si and Ge is developed. With three disposable parameters, good agreement with experiment is obtained for P, As, and Sb impurities in Si and Ge and Bi in Ge. Predictions are made for N in Si and Ge.Keywords
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