Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
- 18 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 50 (1-3), 97-104
- https://doi.org/10.1016/s0921-5107(97)00143-8
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Mg-doped p-type GaN grown by reactive molecular beam epitaxyApplied Physics Letters, 1996
- Reactive MBE Growth of GaN and GaN:H on GaN/SiC SubstratesMRS Proceedings, 1996
- Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaNMRS Proceedings, 1996
- Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBEMRS Proceedings, 1996
- Free and Bound Excitons in GaN Epitaxial FilmsMRS Proceedings, 1996
- On p-type doping in GaN—acceptor binding energiesApplied Physics Letters, 1995
- Growth Kinetics and Structural Quality in GaN Epitaxy by Low Pressure MOVPEMRS Proceedings, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation IntensityPhysical Review B, 1972
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971