Dual-wavelength demultiplexing InGaAsP photodiode

Abstract

We report the successful operation of a new photodiode structure capable of detecting and demultiplexing two wavelength bands simultaneously. Wavelength discrimination is achieved with a multilayer structure that incorporates p‐n junctions in two In_xGa_1−xAs_yP_1−y layers having different band gaps. In initial devices ’’crosstalk’’ between the photoresponses is less than −10 dB at each response peak.