The Three-Body Correlation Function in Amorphous Silicon Probed by X-Ray Absorption Spectroscopy
- 15 October 1990
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 13 (4), 319-325
- https://doi.org/10.1209/0295-5075/13/4/006
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- X-ray absorption spectroscopy on amorphous silicon: A probe for the three-body correlation-functionJournal of Non-Crystalline Solids, 1989
- Structural investigation ofa-Si anda-Si:H using x-ray-absorption spectroscopy at the SiKedgePhysical Review B, 1989
- Thermal and structural damping of the multiple-scattering contributions to the x-ray-absorption coefficientPhysical Review B, 1989
- Multielectron excitations in x-ray-absorption spectra ofa-Si:HPhysical Review B, 1988
- Structural, Dymanical, and Electronic Properties of Amorphous Silicon: Anab initioMolecular-Dynamics StudyPhysical Review Letters, 1988
- Generation of amorphous-silicon structures with use of molecular-dynamics simulationsPhysical Review B, 1987
- Multiple-scattering effects in theK-edge x-ray-absorption near-edge structure of crystalline and amorphous siliconPhysical Review B, 1987
- Computer Generation of Structural Models of Amorphous Si and GePhysical Review Letters, 1985
- Calculation of X-ray absorption near-edge structure, XANESComputer Physics Communications, 1982
- XANES: Determination of bond angles and multi-atom correlations in order and disordered systemsSolid State Communications, 1981