Picosecond luminescence of excitons localized by disorder in CdSxSe1−x
- 30 April 1987
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 37 (1), 45-50
- https://doi.org/10.1016/0022-2313(87)90181-5
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Excitonic Mobility Edge inPhysical Review Letters, 1986
- Semiconductor heterojunction topics: Introduction and overviewSolid-State Electronics, 1986
- Electron-hole plasma expansion in the direct-band-gap semiconductors CdS and CdSePhysical Review B, 1985
- Picosecond spectroscopy of highly excited CdSPhysical Review B, 1985
- Kinetics of free and bound excitons in GaAs/AlGaAs double heterostructuresJournal of Physics C: Solid State Physics, 1984
- Alloy broadening in photoluminescence spectra ofPhysical Review B, 1984
- Exciton tunneling inhibited by disorder inPhysical Review B, 1984
- Subnanosecond spectroscopy of disorder-localized excitons in CdPhysical Review B, 1983
- Optical Detection of Multiple-Trapping Relaxation in Disordered Crystalline SemiconductorsPhysical Review Letters, 1982
- Anomalous transit-time dispersion in amorphous solidsPhysical Review B, 1975