New III-V diluted magnetic semiconductors (invited)

Abstract

A new class of diluted magnetic semiconductor (DMS) based on a III‐V semiconductor is reviewed. The new DMS, (In,Mn)As, was made possible by low temperature molecular beam epitaxial growth. Magnetic measurements and x‐ray diffraction showed homogeneous incorporation of Mn in the films under certain growth conditions, and inclusion of a MnAs‐like phase if the conditions are not optimized. The films can be made either p‐ or n‐type by choosing the growth conditions and/or doping. Homogeneous n‐type (In,Mn)As layers were paramagnetic and showed negative magnetoresistance. On the other hand, remanent magnetization was observed in p‐type samples at low temperature and an anomalous Hall effect associated with it. The presence of such effects was most readily explained in terms of formation of bound magnetic polarons. A first result of anomalous Hall effect in a heterojunction is also presented.