Selective InAs growth by chemical beam epitaxy
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4), 334-338
- https://doi.org/10.1016/0022-0248(96)00003-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)Journal of Crystal Growth, 1994
- Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1991
- Chemical beam epitaxial growth of InAs using trimethylindium and arsineApplied Physics Letters, 1990
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989
- The morphology and electrical properties of heteroepitaxial InAs prepared by MBEApplied Physics A, 1984