Epitaxial growth of Hg0.7Cd0.3Te by laser-assisted deposition
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3), 255-257
- https://doi.org/10.1063/1.94317
Abstract
Epitaxial n‐type Hg0.7Cd0.3Te layers on (111)A CdTe substrates have been grown at 130 °C by laser‐assisted deposition. Mobility and carrier concentration values at 77 K range from 4000 to 7000 cm2/Vs and 0.7 to 3×1016 cm−3, respectively. Films can be converted to p type after annealing at 410 °C. Implanted n+/p photodiodes have been demonstrated.Keywords
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