Diffusion of phosphorus in GaAs and formation of GaP and GaP-GaAs alloys
- 31 December 1962
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (6), 411-414
- https://doi.org/10.1016/0038-1101(62)90131-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Precision Lapping DeviceReview of Scientific Instruments, 1957