Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at Zero Magnetic Field

Abstract

A metal-insulator transition in two-dimensional electron gases at $B=0\mathrm{}$ is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around ${h/e}^2$ and critical carrier densities of $1.2\times {10}^{11}{\mathrm{cm}}^{-2\mathrm{}}$. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.