High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si(111) Surfaces
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6S)
- https://doi.org/10.1143/jjap.34.3346
Abstract
High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered 1×1 areas. The 5×5 and 9×9 areas shrink to disappear as a consequence of the growth of 7×7 domains. The smaller domain size and the faster shrinking speed of the 9×9 structure indicate its lower stability compared to the 5×5 structure. The 11×11 and 13×13 DAS structures were occasionally observed at above 500°C, however, suggesting lower stability than the (2n+1)×(2n+1) DAS structures with smaller n. The √3×√3 structures also appear at high-temperatures below 550°C, whereas the 2×2, c 2×4, and c 2×8 structures are observed only at room temperatures. Clear STM images of the √3×√3 structure can rarely be obtained at temperatures higher than 600°C, which is considered to be due to the thermally excited random motion of Si adatoms.Keywords
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