An Experimental Investigation of the Maximum Photo-emf of a p-n Junction
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (13), 5422-5423
- https://doi.org/10.1063/1.1709346
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Behavior of Quasi-Fermi Levels in a Nonequilibrium SemiconductorAmerican Journal of Physics, 1966
- GaAs p-n Junction Diodes for Wide Range ThermometryReview of Scientific Instruments, 1963