Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE

Abstract

Er doping of GaAs, AlGaAs and quantum wells (QW) has been achieved by MBE. A new type of Er3+ centre is observed in AlGaAs and QW structures, which is characterised by a main peak at 1.565μ at 4.5 K. At 300 K, the main peak is always at 1.54μ. In the case of QW structures, its linewidth goes down to only 1 meV and it is surrounded by up to 16 less intense peaks.