Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
- 13 February 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 40 (7), 472-475
- https://doi.org/10.1103/physrevlett.40.472
Abstract
The superlattice phenomenon observed by Cole, Lakhani, and Stiles in the electron inversion layer on (119)Si is explained by projecting the bulk band structure onto the surface. On high-index surfaces, the valley degeneracy only occurs at the surface-band-structure zone boundary. Lifting this degeneracy gives rise to minigaps which we observe in the optical conductivity as interband absorption.Keywords
This publication has 4 references indexed in Scilit:
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- Valley splitting in an n-channel (100) inversion layer on p-type siliconSurface Science, 1976
- Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized RegimesPhysical Review Letters, 1975
- Interband Absorption and the Optical Properties of Polyvalent MetalsPhysical Review B, 1971